| PART |
Description |
Maker |
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLP10H610-15 |
Broadband LDMOS driver transistor
|
NXP Semiconductors
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL6H0514L-130 BLL6H0514LS-130 |
LDMOS driver transistor BLL6H0514L-130<SOT1135A (CDFM2)|<<http://www.nxp.com/packages/SOT1135A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| TMF8901B |
Si RF LDMOS Transistor
|
AUK corp
|
| BLF8G27LS-100GV |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLC6G22LS-75 BLC6G22-75 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G10S-45 |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLF578 |
Power LDMOS transistor
|
NXP Semiconductors
|
